Precision polysilicon resistors
US9000564B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 21, 2012 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Dec 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
Use of a replacement metal gate (RMG) process provides an opportunity to create precision polysilicon resistors alongside metal gate transistors. During formation of a sacrificial polysilicon gate, the precision polysilicon resistor can also be formed from the same polysilicon film. The polysilicon resistor can be slightly recessed so that a protective insulating layer can cover the resistor during subsequent replacement of the sacrificial gate with a metal gate. The final structure of the precision polysilicon resistor fabricated using such a process is more compact and less complex than existing structures that provide metal resistors for integrated circuits having metal gate transistors. Furthermore, the precision polysilicon resistor can be freely tuned to have a desired sheet resistance by either implanting the polysilicon film with dopants, adjusting the polysilicon film thickness, or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.