Solid state sensor for metal ion detection and trapping in solution
US9000783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2010 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Aug 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A device, apparatus and method for trapping metal ions and detecting metal ion contamination in a solution provide a semiconductor device formed on a semiconductor substrate and including an N-well formed over a P-type substrate and at least a contact portion of the N-well in electrical contact with the solution. When the semiconductor device is optically illuminated, a P/N junction is formed as a result of photovoltaic phenomena. Metal ions from the solution migrate to the contact area due to the voltage created at the P/N junction. The semiconductor device includes a conductive structure with conductive features separated by a gap and therefore in an initially electrically open state. When the ions migrate to the contact area, they precipitate, at least partially bridging the gap and creating conductance through the conductive structure. The conductance may be measured to determine the amount of metal ion contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.