Patent · US Active

Silicon wafer and method for producing it

US9005563B2 · kind B2 · utility

2Cited by

6References

16Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Wilfried von Ammon · Burghausen, DE
Gudrun Kissinger · Lebus, DE
Dawid Kot · Opoczno, PL

Key dates

Filing date	Jul 27, 2011
Grant date	Apr 14, 2015
Priority date	—
Expiry date	Dec 21, 2033

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B33/02
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Silicon wafers having an oxygen concentration of 5·1017 to 7.5·1017 cm−3 have the following BMD densities after the following thermal processes, carried out alternatively:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.