Patent · US Active

Method and system of providing dopant concentration control in different layers of a semiconductor device

US9006020B2 · kind B2 · utility

0Cited by
17References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 11, 2013
Grant dateApr 14, 2015
Priority date
Expiry dateFeb 17, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/543
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.