Method and system of providing dopant concentration control in different layers of a semiconductor device
US9006020B2 · kind B2 · utility
0Cited by
17References
25Claims
0Family size
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Key dates
| Filing date | Jan 11, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Feb 17, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.