Method for manufacturing semiconductor devices
US9006029B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2011 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jan 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method is disclosed for manufacturing a semiconductor device including a semiconductor chip having electrode pads formed on a first major surface and a bonding layer provided on a second major surface, and a substrate having the semiconductor chip mounted on the substrate. The manufacturing method can include applying a fillet-forming material to a portion contacting an outer edge of the second major surface of the semiconductor chip on a front face of the substrate. The method can include bonding the second major surface of the semiconductor chip to the substrate via the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.