Pulsed laser anneal process for transistors with partial melt of a raised source-drain
US9006069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2011 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Dec 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-planar transistor including partially melted raised semiconductor source/drains disposed on opposite ends of a semiconductor fin with the gate stack disposed there between. The raised semiconductor source/drains comprise a super-activated dopant region above a melt depth and an activated dopant region below the melt depth. The super-activated dopant region has a higher activated dopant concentration than the activated dopant region and/or has an activated dopant concentration that is constant throughout the melt region. A fin is formed on a substrate and a semiconductor material or a semiconductor material stack is deposited on regions of the fin disposed on opposite sides of a channel region to form raised source/drains. A pulsed laser anneal is performed to melt only a portion of the deposited semiconductor material above a melt depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.