Patent · US Active

Semiconductor structure having fluoride metal layer and process thereof

US9006092B2 · kind B2 · utility

2Cited by

19References

17Claims

0Family size

Assignee

UNITED MICROELECTRONICS CORP. · TW

Inventors

Kun-Hsien Lin · Danei, TW
Chun-Hsien Lin · Tainan, TW
Hsin-Fu Huang · Yuanchang, TW

Key dates

Filing date	Nov 3, 2011
Grant date	Apr 14, 2015
Priority date	—
Expiry date	Dec 16, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/685
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor structure includes a substrate, a dielectric layer and a fluoride metal layer. The dielectric layer is located on the substrate. The fluoride metal layer is located on the dielectric layer. Furthermore, the present invention also provides a semiconductor process to form said semiconductor structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.