Method of patterning platinum layer
US9006105B2 · kind B2 · utility
1Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F1/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of patterning a platinum layer includes the following steps. A substrate is provided. A platinum layer is formed on the substrate. An etching process is performed to pattern the platinum layer, wherein an etchant used in the etching process simultaneously includes at least a chloride-containing gas and at least a fluoride-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.