Apparatus for monitoring ion implantation
US9006676B2 · kind B2 · utility
1Cited by
10References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 14, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jun 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second sensor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second sensor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.