Method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof
US9006703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jul 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer of the semiconductor structure, and determining a post-removal thickness of a dielectric layer positioned adjacent the aluminum layer. The post-removal thickness may be determined subsequent to the removing of the portion of the first lateral extrusion. The method can also include determining a difference between the post-removal thickness of the dielectric layer and a pre-removal thickness of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.