Radiation hardened memory cell and design structures

US9006827B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John G. Massey · Jericho, US
• Scott J. McAllister · Poughkeepsie, US
• Charles J. Montrose · Clintondale, US
• Stewart E. Rauch, III · Poughkeepsie, US

Key dates

• Filing date: Nov 9, 2011
• Grant date: Apr 14, 2015
• Expiry date: Jan 30, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A radiation hardened static memory cell, methods of manufacture and design structures are provided. The method includes forming one or more first gate stacks and second gate stacks on a substrate. The method further includes providing a shallow implant process for the one or more first gate stacks such that diffusion regions of the one or more first gate stacks are non-butted junction regions. The method further includes providing a deep implant process for the one or more second gates stack such that diffusions regions of the one or more second gate stacks are butted junction regions.