Semiconductor devices having through silicon vias and methods of fabricating the same
US9006902B2 · kind B2 · utility
3Cited by
10References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2014 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jan 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided having an insulating layer on a semiconductor substrate. The insulating layer and the semiconductor substrate define a through hole penetrating the semiconductor substrate and the insulating layer. A through electrode is provided in the through hole. A spacer is provided between the semiconductor substrate and the through electrode. An interconnection in continuity with the through electrode is provided on the insulating layer. A barrier layer covering a side and a bottom of the interconnection and a side of the through electrode is provided and the barrier layer is formed in one body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.