Magnetic random access memory device and method of writing data therein
US9007819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2012 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jul 23, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method of writing data in an MRAM device, a first operation unit is selected in a plurality of memory cells of the MRAM device. First to n-th switching pulses are sequentially applied to the first operation unit to write data in first to n-th groups of memory cells of the first operation unit, respectively. The n-th switching pulse may have a current level lower than that of an (n−1)th switching pulse, where n is an integer larger than at least 1. The n-th switching pulse may have a pulse width narrower than that of an (n−1)th switching pulse, where n is an integer larger than at least 1. The technique can be repeated for a second operation unit. A device and system are disclosed in which different current switching pulses are applied to multiple groups of memory cells within the first and/or second operation units.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.