Patent · US Active

Removal of alkaline crystal defects in lithographic patterning

US9012133B2 · kind B2 · utility

0Cited by
17References
21Claims
0Family size

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Key dates

Filing dateAug 30, 2011
Grant dateApr 21, 2015
Priority date
Expiry dateMar 9, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/405
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An adhesion promoter layer is formed on a surface of a substrate as an adhesion promoter layer, on which a photoresist is applied. The photoresist is lithographically exposed. Soluble portions of the lithographically exposed photoresist are dissolved in a developer solution including tetraalkylammonium hydroxide. Tetraalkylammonium hydroxide salts are formed in crystalline forms on surfaces of the substrate. A water-soluble acidic polymer layer is applied over the surfaces of the substrate to dissolve the tetraalkylammonium hydroxide salts. The water-soluble acidic polymer layer is rinsed off by water, thereby providing clean surfaces that do not include the tetraalkylammonium hydroxide salts on the substrate. Subsequent processes can be performed on the substrate, which is covered by remaining portions of the developed photoresist and has clean surfaces in regions not covered by the photoresist.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.