SiGe HBT and method of manufacturing the same
US9012279B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2012 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Sep 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
Abstract
A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.