Manufacturing method for a shallow trench isolation
US9012300B2 · kind B2 · utility
2Cited by
17References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2012 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Oct 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a shallow trench isolation. First, a substrate is provided, a hard mask layer and a patterned photoresist layer are sequentially formed on the substrate, at least one trench is then formed in the substrate through an etching process, the hard mask layer is removed. Afterwards, a filler is formed at least in the trench and a planarization process is then performed on the filler. Since the planarization process is performed only on the filler, so the dishing phenomenon can effectively be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.