Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof
US9012306B2 · kind B2 · utility
8Cited by
7References
19Claims
0Family size
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Key dates
| Filing date | Jun 24, 2011 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of formation of a sacrificial bed (101) on the support (100), formation of pillars (102) on said sacrificial bed, said pillars being made of a material compatible with GaN epitaxial growth, growth of a nitride crystal layer (103) on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support in holes (107) formed between the pillars, and removing the nitride crystal layer from the support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.