Methods and systems for dopant activation using microwave radiation
US9012315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2013 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Aug 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods are provided for activating dopants in a semiconductor structure. For example, a semiconductor structure including a plurality of dopants is provided. One or more microwave-absorption materials are provided, the microwave-absorption materials being capable of increasing an electric field density associated with the semiconductor structure. Microwave radiation is applied to the microwave-absorption materials and the semiconductor structure to activate the plurality of dopants for fabricating semiconductor devices. The microwave-absorption materials are configured to increase the electric field density in response to the microwave radiation so as to increase the semiconductor structure's absorption of the microwave radiation to activate the dopants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.