Inventor · Hengshan, TW

Yan-Ting Lin

23Patents
3h-index
33Co-inventors
59Inventor score

Filing activity: Nov 9, 2011 → Jul 3, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9406546B2 Mechanism for FinFET well doping Electricity 8 Active
US10483396B1 Interfacial layer between fin and source/drain region Electricity 7 Active
US9076762B2 Contact structure of semiconductor device Electricity 5 Active
US11133416B2 Methods of forming semiconductor devices having plural epitaxial layers Electricity 3 Active
US11075108B2 Mechanism for FinFET well doping Electricity 2 Active
US10710203B2 Universal jig for clamping wind turbine blades Emerging Cross-Sectional Technologies 1 Active
US12080759B2 Transistor source/drain regions and methods of forming the same Electricity 1 Active
US9012315B2 Methods and systems for dopant activation using microwave radiation Electricity 1 Active
US12191393B2 Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction Electricity 0 Active
US12112975B2 Mechanism for finFET well doping Electricity 0 Active
US8555641B2 Cooling device for Stirling circulated dry storage container Mechanical Engineering; Lighting; Heating 0 Active
US11482620B2 Interfacial layer between Fin and source/drain region Electricity 0 Active
US11735668B2 Interfacial layer between fin and source/drain region Electricity 0 Active
US11855142B2 Supportive layer in source/drains of FinFET devices Electricity 0 Active
US11942550B2 Nanosheet semiconductor device and method for manufacturing the same Electricity 0 Active
US11440630B2 Self-righting unmanned ship suitable for adverse sea conditions and working mode thereof Performing Operations; Transporting 0 Active
US10297492B2 Mechanism for FinFET well doping Electricity 0 Active
US10920742B2 Noise-reduction device for wind turbine and the wind turbine applied thereof Emerging Cross-Sectional Technologies 0 Active
US9559186B2 Epitaxially grown stacked contact structure of semiconductor device Electricity 0 Active
US10854715B2 Supportive layer in source/drains of FinFET devices Electricity 0 Active
US10944005B2 Interfacial layer between fin and source/drain region Electricity 0 Active
US11742237B2 Mechanism for FinFET well doping Electricity 0 Active
US11476331B2 Supportive layer in source/drains of FinFET devices Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.