Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9012766B2 · kind B2 · utility
0Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2009 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Aug 4, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
One embodiment of the present invention provides a solar cell. The solar cell includes a substrate, a first heavily doped crystalline-Si (c-Si) layer situated above the substrate, a lightly doped c-Si layer situated above the first heavily doped crystalline-Si layer, a second heavily doped c-Si layer situated above the lightly doped c-Si layer, a front side electrode grid situated above the second heavily doped c-Si layer, and a backside electrode grid situated on the backside of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.