Patent · US Active

Recessed contact to semiconductor nanowires

US9012883B2 · kind B2 · utility

1Cited by

0References

11Claims

0Family size

Assignee

SOL VOLTAICS AB · SE

Inventors

Ingvar ÅBERG · Lund, SE
Martin Magnusson · Malmö, SE
Damir Asoli · Malmö, SE
Lars Samuelson · Malmö, SE
Jonas Ohlsson · Malmö, SE

Key dates

Filing date	Dec 21, 2012
Grant date	Apr 21, 2015
Priority date	—
Expiry date	Apr 12, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/932
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.