Damir Asoli
9Patents
3h-index
6Co-inventors
46Inventor score
Filing activity: Jan 14, 2008 → Apr 21, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7829443B2 | Nitride nanowires and method of producing such | Emerging Cross-Sectional Technologies | 59 | Active |
| US8309439B2 | Nitride nanowires and method of producing such | Emerging Cross-Sectional Technologies | 27 | Active |
| US8664094B2 | Method of producing nitride nanowires with different core and shell V/III flow ratios | Emerging Cross-Sectional Technologies | 6 | Active |
| US9024338B2 | Device with nitride nanowires having a shell layer and a continuous layer | Emerging Cross-Sectional Technologies | 3 | Active |
| US9012883B2 | Recessed contact to semiconductor nanowires | Emerging Cross-Sectional Technologies | 1 | Active |
| US9947831B2 | Light emitting diode device having III-nitride nanowires, a shell layer and a continuous layer | Emerging Cross-Sectional Technologies | 0 | Active |
| US9818830B2 | Recessed contact to semiconductor nanowires | Emerging Cross-Sectional Technologies | 0 | Active |
| US9660136B2 | Nitride nanowires and method of producing such | Emerging Cross-Sectional Technologies | 0 | Active |
| US9419086B2 | Recessed contact to semiconductor nanowires | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.