Patent · US Active

Nanowire growth on dissimilar material

US9012887B2 · kind B2 · utility

1Cited by

5References

20Claims

0Family size

Assignee

QUNANO AB · SE

Inventors

Lars Samuelson · Malmö, SE
Jonas Ohlsson · Malmö, SE
Thomas Mårtensson · Malmö, SE
Patrik Svensson · Palo Alto, US

Key dates

Filing date	Oct 24, 2011
Grant date	Apr 21, 2015
Priority date	—
Expiry date	Oct 24, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/949
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device including a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.