Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
US9012935B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 4, 2013 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Sep 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
Abstract
A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon (“n” is a positive integer) having rounded corners.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.