Optoelectronic semiconductor bodies having a reflective layer system

US9012940B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Robert Walter · Parsberg, DE
• Vincent Grolier · Birkenfeld, DE
• Michael D. Schmal · Orwigsburg, US
• Korbinian Perzlmaier · Regensburg, DE
• Franz Eberhard · Kilchberg, CH

Key dates

• Filing date: Apr 26, 2010
• Grant date: Apr 21, 2015
• Expiry date: May 7, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optoelectronic semiconductor body (1) having an active semiconductor layer sequence (10) and a reflective layer system (20) is described. The reflective layer system (20) comprises a first radiation-permeable layer (21), which adjoins the semiconductor layer sequence (10), and a metal layer (23) on the side of the first radiation-permeable layer (21) facing away from the semiconductor layer sequence (10). The first radiation-permeable layer (21) contains a first dielectric material. Between the first radiation-permeable layer (21) and the metal layer (23) there is disposed a second radiation-permeable layer (22) which contains an adhesion-improving material. The metal layer (23) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer (23) is improved in comparison with the adhesion on the first dielectric material.