Nonvolatile semiconductor storage device and method of manufacturing the same
US9012972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2013 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Sep 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A nonvolatile semiconductor storage device includes a semiconductor substrate; a first insulating film disposed above the semiconductor substrate; a first electrode film disposed above the first insulating film; a second insulating film disposed above the first electrode film; a second electrode film disposed above the second insulating film; a third electrode film filling a first trench and overlying the second electrode film, the first trench having a first width and a first depth and extending through the second electrode film and the second insulating film and into the first electrode film; and a first barrier metal film and a first metal film disposed above the third electrode film; wherein the third electrode film above the second electrode film has a first thickness equal to or less than ½ of the first width of the first trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.