Vertical memory devices and methods of manufacturing the same
US9012974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2011 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Aug 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A vertical memory device includes a channel, a ground selection line (GSL), word lines, a string selection line (SSL), and a contact. The channel includes a vertical portion and a horizontal portion. The vertical portion extends in a first direction substantially perpendicular to a top surface of a substrate, and the horizontal portion is connected to the vertical portion and parallel to the top surface of the substrate. The GSL, the word lines and the SSL are formed on a sidewall of the vertical portion of the channel sequentially in the first direction, and are spaced apart from each other. The contact is on the substrate and electrically connected to the horizontal portion of the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.