Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same
US9013838B1 · kind B1 · utility
4Cited by
9References
20Claims
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Key dates
| Filing date | Oct 1, 2013 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Oct 1, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4902
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In at least one embodiment, an AMR sensor is provided that includes barber pole structures having upper and low metal layers that are formed of different materials. The metal material closer to the AMR element is formed of a material that can be etched using an etching process that does not attack the AMR material. In some other embodiments, AMR sensors having segmented AMR sensing elements are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.