Susceptor for vapor phase epitaxial growth device
US9017483B2 · kind B2 · utility
10Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Feb 2, 2009 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Feb 28, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4588
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.