Method for integrating low-k dielectrics
US9017933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2011 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Jun 9, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/145
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.