Method for manufacturing semiconductor device, method for processing substrate and substrate processing apparatus
US9018104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2011 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Jul 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for manufacturing a semiconductor device, including forming an insulating film having a prescribed composition and a prescribed film thickness on a substrate by alternately performing the following steps prescribed number of times: supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.