Semiconductor reaction chamber with plasma capabilities
US9018111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2013 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Jul 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.