Polishing pad and production method therefor, and production method for semiconductor device
US9018273B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2011 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2110/0025
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A polishing pad, having a polishing layer comprising a thermoset polyurethane foam, wherein the polishing layer has an in-plane variation of 12 or less in microrubber A hardness, the variation being obtained by measuring the polishing layer from a polishing surface side of the layer, the thermoset polyurethane foam contains, as raw material components, an isocyanate component and active-hydrogen-containing compounds, and the active-hydrogen-containing compounds comprise a trifunctional polyol having at least one terminated hydroxyl group that is a secondary hydroxyl group, and having a hydroxyl group value of 150 to 1,000 mg KOH/g in an amount of 10 to 50 parts by weight for 100 parts by weight of the active-hydrogen-containing compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.