Patent · US Active

Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell

US9018521B1 · kind B1 · utility

25Cited by
40References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 3, 2010
Grant dateApr 28, 2015
Priority date
Expiry dateSep 17, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/544

Abstract

A multijunction solar cell comprising an upper first solar subcell having a first band gap; a middle second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a graded interlayer adjacent to the second solar subcell; the graded interlayer having a third band gap greater than the second band gap; a third solar subcell adjacent to the interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and a distributed Bragg reflector (DBR) layer adjacent to the upper first subcell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.