Flat SiC semiconductor substrate
US9018639B2 · kind B2 · utility
11Cited by
46References
8Claims
0Family size
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Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Aug 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR). The resulting SiC wafer has a mirror-like surface that is fit for epitaxial deposition of SiC. The specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR) of the wafer are preserved following the addition of the epitaxy layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.