Silicon carbide power device equipped with termination structure
US9018640B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2014 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Mar 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/665
Abstract
A silicon carbide power device equipped with termination structure comprises a silicon carbide substrate, a power element structure and a termination structure. The silicon carbide substrate contains a drift layer which has a first conductivity and includes an active zone and a termination zone. The power element structure is located in the active zone. The termination structure is located in the termination zone and has a second conductivity, and includes at least one first doped ring abutting and surrounding the power element structure and at least one second doped ring surrounding the first doped ring. The first doped ring has a first doping concentration smaller than that of the second doped ring and a first doping depth greater than that of the second doped ring, thereby can increase the breakdown voltage of the silicon carbide power device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.