Zener diode device and fabrication

US9018673B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Weize Chen · Phoenix, US
• Xin Lin · Phoenix, US
• Patrice M. Parris · Phoenix, US

Key dates

• Filing date: Aug 31, 2012
• Grant date: Apr 28, 2015
• Expiry date: Feb 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126

Abstract

A disclosed Zener diode includes, in one embodiment, an anode region and a cathode region that form a shallow sub-surface latitudinal Zener junction. The Zener diode may further include an anode contact region interconnecting the anode region with a contact located away from the Zener junction region and a silicide blocking structure overlying the anode region. The Zener diode may also include one or more shallow, sub-surface longitudinal p-n junctions at the junctions between lateral edges of the cathode region and the adjacent region. The adjacent region may be a heavily doped region such as the anode contact region. In other embodiments, the Zener diode may include a breakdown voltage boost region comprising a more lightly doped region located between the cathode region and the anode contact region.