Solid-state imaging device and imaging apparatus
US9018688B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2012 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Sep 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The solid-state imaging device includes a semiconductor layer 11 in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer 11, and a longitudinal transistor Tr1 in which a gate electrode 21 is formed to be embedded in the semiconductor layer 11 from a surface 15 of the semiconductor layer 11. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion 21A of the gate electrode 21 of the longitudinal transistor Tr1 embedded in the semiconductor substrate 11 and is connected to a channel formed by the longitudinal transistor Tr1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.