Substrate processing apparatus and method of manufacturing semiconductor device
US9018689B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2014 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Mar 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02186
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing apparatus includes a source gas supply system including a source gas supply pipe connected to a source gas source and a source gas supply controller; a reactive gas supply system including a reactive gas supply pipe connected to a reactive gas source, a reactive gas supply controller, a plasma generation unit and an ion trap unit and an inert gas supply pipe whereat an inert gas supply controller is disposed; a processing chamber supplied with a source gas by the source gas supply system and a reactive gas by the reactive gas supply system; and a control unit configured to control the gas supply controllers. The inert gas supply pipe has a downstream side connected between the reactive gas supply controller and the plasma generation unit and an upstream side connected to an inert gas supply source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.