Gas-diffusion barriers for MEMS encapsulation
US9018715B2 · kind B2 · utility
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22References
20Claims
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Key dates
| Filing date | Nov 30, 2012 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Feb 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.