Photodiode and production method

US9018726B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventors

• Jochen Kraft · Bruck an der Mur, AT
• Ingrid Jonak-Auer · Graz, AT
• Rainer Minixhofer · Kufstein, AT
• Jordi Teva · Eindhoven, NL
• Herbert Truppe · Graz, AT

Key dates

• Filing date: May 4, 2012
• Grant date: Apr 28, 2015
• Expiry date: May 4, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

The photodiode has a p-type doped region (2) and an n-type doped region (3) in a semiconductor body (1), and a pn junction (4) between the p-type doped region and the n-type doped region. The semiconductor body has a cavity (5) such that the pn junction (4) has a distance (d) of at most 30 μm from the bottom of the cavity (7).