Adjustable avalanche diode in an integrated circuit
US9018729B2 · kind B2 · utility
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Key dates
| Filing date | May 16, 2013 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | May 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/139
Abstract
An avalance diode including, between two heavily-doped regions of opposite conductivity types arranged at the surface of a semiconductor region, a lightly-doped region, with length L of the lightly-doped region between the heavily-doped regions approximately ranging between 50 and 200 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.