Pascal Fonteneau
22Patents
3h-index
12Co-inventors
56Inventor score
Filing activity: May 16, 2013 → Jun 30, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9905565B1 | Memory cell | Electricity | 4 | Active |
| US9165943B2 | ON-SOI integrated circuit comprising a thyristor (SCR) for protection against electrostatic discharges | Electricity | 3 | Active |
| US9666577B2 | On-SOI integrated circuit equipped with a device for protecting against electrostatic discharges | Electricity | 3 | Active |
| US11031433B2 | Back-side illuminated image sensor | Electricity | 2 | Active |
| US10978487B2 | Inverting circuit | Electricity | 2 | Active |
| US9012955B2 | MOS transistor on SOI protected against overvoltages | Electricity | 2 | Active |
| US9209211B2 | Vertical gate transistor and pixel structure comprising such a transistor | Electricity | 2 | Active |
| US9337302B2 | On-SOI integrated circuit comprising a subjacent protection transistor | Electricity | 2 | Active |
| US11398521B2 | Back-side illuminated image sensor | Electricity | 1 | Active |
| US9354391B2 | Overvoltage protection component and an assembly of integrated circuit chips having said overvoltage protection component | Electricity | 1 | Active |
| US9478570B2 | Vertical gate transistor and pixel structure comprising such a transistor | Electricity | 1 | Active |
| US9391057B2 | Integrated circuit on SOI comprising a transistor protecting from electrostatic discharges | Electricity | 1 | Active |
| US9029955B2 | Integrated circuit on SOI comprising a bipolar transistor with isolating trenches of distinct depths | Electricity | 0 | Active |
| US11610933B2 | Back-side illuminated image sensor | Electricity | 0 | Active |
| US9453977B2 | Assembly of integrated circuit chips having an overvoltage protection component | Electricity | 0 | Active |
| US9018729B2 | Adjustable avalanche diode in an integrated circuit | Electricity | 0 | Active |
| US10062681B2 | SOI integrated circuit equipped with a device for protecting against electrostatic discharges | Electricity | 0 | Active |
| US10312240B2 | Memory cell | Electricity | 0 | Active |
| US9653476B2 | On-SOI integrated circuit comprising a lateral diode for protection against electrostatic discharges | Electricity | 0 | Active |
| US9530922B2 | Overvoltage protection components in an optoelectronic circuit on SOI | Electricity | 0 | Active |
| US12199131B2 | Back-side illuminated image sensor | Electricity | 0 | Active |
| US9165908B2 | On-SOI integrated circuit comprising a triac for protection against electrostatic discharges | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.