Drift management in a phase change memory and switch (PCMS) memory device
US9021227B2 · kind B2 · utility
8Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2011 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Jan 9, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to the drift management for a memory device. In at least one embodiment, the memory device of the present disclosure may include a phase change memory and switch (hereinafter “PCMS”) memory cell and a memory controller that is capable of implementing drift management to control drift. Other embodiments are described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.