Plasma processing apparatus and semiconductor device manufacturing method
US9021984B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2011 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Mar 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.