Process gas management for an inductively-coupled plasma deposition reactor
US9021985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/6851
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.