Polishing solution for CMP and polishing method using the polishing solution
US9022834B2 · kind B2 · utility
0Cited by
26References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2011 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jan 21, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.