Patent · US Active

Method for electron beam induced etching

US9023666B2 · kind B2 · utility

3Cited by

27References

26Claims

0Family size

Assignee

Carl Zeiss SMS Ltd. · IL

Inventors

Nicole Auth · Gustavsburg, DE
Petra Spies · Mainz, DE
Rainer Becker · Pfungstadt, DE
Thorsten Hofmann · Rodgau, DE
Klaus Edinger · Lorsch, DE

Key dates

Filing date	Aug 13, 2009
Grant date	May 5, 2015
Priority date	—
Expiry date	Aug 13, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32136
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.