Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions
US9023673B1 · kind B1 · utility
5Cited by
22References
13Claims
0Family size
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Inventors
Key dates
| Filing date | Jun 13, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jun 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02458
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to grow single phase group III-nitride articles including films, templates, free-standing substrates, and bulk crystals grown in semi-polar and non-polar orientations is disclosed. One or more steps in the growth process includes the use of additional free hydrogen chloride to eliminate undesirable phases, reduce surface roughness, and increase crystalline quality. The invention is particularly well-suited to the production of single crystal (11.2) GaN articles that have particular use in visible light emitting devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.