Method of fabricating heterojunction battery
US9023681B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Sep 25, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection. Therefore, the step of texturization is removed and the fabrication process simplified. As polycrystal silicon texturization is more challenging, the present invention is of more significa…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.